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2SC3710A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
High-Current Switching Applications
Unit: mm * * * Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1452A
Maximum Ratings (Tc = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 -55 to 150 Unit V V V A A W
JEDEC
C C
2-10R1A
JEITA TOSHIBA
Electrical Characteristics (Tc = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 s IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 6 A IC = 6 A, IB = 0.3 A IC = 6 A, IB = 0.3 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz
Weight: 1.7 g (typ.)
Min 80 70 40 Output 5 Typ. 0.2 0.9 80 220 0.2 Max 10 10 240 0.4 1.2 V V MHz pF Unit A A V
IB1 IB2
1.0
s
VCC 30 V Fall time tf IB1 = -IB2 = 0.3 A, duty cycle 1% 0.2
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
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2004-07-07
2SC3710A
Marking
C3710A
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-07-07
2SC3710A
IC - VCE
1.0
VCE - IC
(V)
50 40 Common emitter Tc = 25C Common emitter Tc = 25C 60 80 100 150 200
10
100 80 70
60
IC (A)
VCE
0.8
IB = 20 mA 40
8
Collector-emitter voltage
Collector current
6
30
0.6 300 0.4
4
20
400 600
2
IB = 10 mA
0.2
0 0
2
4
6
8
10
12
14
0 0
2
4
6
8
10
12
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
VCE - IC
1.0 1.0
VCE - IC
(V)
Common emitter Tc = -55C Common emitter Tc = 100C 0.8
(V)
0.8
IB = 20 mA 40 60 80 100
VCE
150
200
VCE
IB = 50 mA 0.6
100
150
200 300
Collector-emitter voltage
0.6
Collector-emitter voltage
0.4
300 600
0.4
400 700
0.2
0.2
0 0
2
4
6
8
10
12
0 0
2
4
6
8
10
12
Collector current IC (A)
Collector current IC (A)
hFE - IC
500 300 Common emitter VCE = 1 V Tc = 100C 100 50 30 25 -55 1
VCE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter IC/IB = 20
0.5 0.3
DC current gain
hFE
0.1 0.05
Tc = -55C 25 100
10 0.1
0.3
1
3
10
20
0.02 0.1
0.3
1
3
10
20
Collector current IC (A)
Collector current IC (A)
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2004-07-07
2SC3710A
VBE (sat) - IC
5 10 Common emitter IC/IB = 20
IC - VBE
Common emitter VCE = 1 V
Base-emitter saturation voltage VBE (sat) (V)
3
1 0.5 0.3
Tc = -55C 100
IC (A)
25
8
6
Collector current
Tc = 100C 4
25 -55
0.1 0.1
2
0.3
1
3
10
20 0 0
Collector current IC (A)
0.4
0.8
1.2
1.6
2.0
2.4
Base-emitter voltage
VBE
(V)
rth - tw
100
(C/W)
Curves should be applied in thermal limited area. 30 (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 10 (1) 3 (2)
Transient thermal resistance
rth
1 0.3
0.1 0.001
0.01
0.1
1
10
100
1000
Pulse width
tw
(s)
Safe Operating Area
30 IC max (pulsed)* 10 I max C (continuous) 5 3 DC operation Tc = 25C 1 ms* 50 (1) Tc = Ta Infinite heat sink (2) No heat sink (1) 30
PC - Ta
IC (A)
(W) Collector dissipation PC
10 ms*
40
Collector current
1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 VCEO max 100
20
10 (2) 0 0 40 80 120 160 200 240
Collector-emitter voltage
VCE
(V)
Ambient temperature
Ta
(C)
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2004-07-07
2SC3710A
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
5
2004-07-07

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